Electrical spin injection and detection in molybdenum disulfide multilayer channel
نویسندگان
چکیده
Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, the demonstration of an electron spin transport through a semiconducting MoS2 channel remains challenging. Here we show the evidence of the electrical spin injection and detection in the conduction band of a multilayer MoS2 semiconducting channel using a two-terminal spin-valve configuration geometry. A magnetoresistance around 1% has been observed through a 450 nm long, 6 monolayer thick MoS2 channel with a Co/MgO tunnelling spin injector and detector. It is found that keeping a good balance between the interface resistance and channel resistance is mandatory for the observation of the two-terminal magnetoresistance. Moreover, the electron spin-relaxation is found to be greatly suppressed in the multilayer MoS2 channel with an in-plane spin polarization. The long spin diffusion length (approximately ∼235 nm) could open a new avenue for spintronic applications using multilayer transition metal dichalcogenides.
منابع مشابه
Electrical breakdown of multilayer MoS2 field-effect transistors with thickness-dependent mobility.
We report on the experimental investigation and modeling of electrical breakdown in multilayer (a few to tens of nanometers thick) molybdenum disulfide (MoS2) field-effect transistors (FETs). By measuring MoS2 devices ranging from 5.7 nm to 77 nm in thicknesses, we achieve a breakdown current of 1.2 mA, mobility of 42 cm(2) V(-1) s(-1), and on/off current ratio IOn/IOff ∼ 10(7). Through measure...
متن کاملElectrical gate control of spin current in van der Waals heterostructures at room temperature
Two-dimensional (2D) crystals offer a unique platform due to their remarkable and contrasting spintronic properties, such as weak spin-orbit coupling (SOC) in graphene and strong SOC in molybdenum disulfide (MoS2). Here we combine graphene and MoS2 in a van der Waals heterostructure (vdWh) to demonstrate the electric gate control of the spin current and spin lifetime at room temperature. By per...
متن کاملChemical doping of MoS2 multilayer by p-toluene sulfonic acid
We report the tailoring of the electrical properties of mechanically exfoliated multilayer (ML) molybdenum disulfide (MoS2) by chemical doping. Electrical charge transport and Raman spectroscopy measurements revealed that the p-toluene sulfonic acid (PTSA) imposes n-doping in ML MoS2. The shift of threshold voltage for ML MoS2 transistor was analyzed as a function of reaction time. The threshol...
متن کاملElectrical stability of multilayer MoS2 fieldeffect transistor under negative bias stress at various temperatures
متن کامل
High-performance MoS2 transistors with low-resistance molybdenum contacts
Articles you may be interested in Separation of interlayer resistance in multilayer MoS2 field-effect transistors Appl. Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2 field effect transistors Appl. Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition Appl.
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره 8 شماره
صفحات -
تاریخ انتشار 2017